Silicon Nitride (SiN) grids are exceptionally robust, chemically inert, and can withstand very high temperatures (in excess of 1000C), making them ideal for dynamic in-situ experiments where processes are observed in real-time within the microscope. Their composition, lacking carbon and nitrogen, also provides a clean background for elemental analysis techniques like Energy-Dispersive X-ray Spectroscopy (EDS) and Electron Energy Loss Spectroscopy (EELS).